High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics

The high-entropy concept provides extended, optimized space of a composition, resulting in unusual transport phenomena and excellent thermoelectric performance. By contrast, the localized phonons from the entropy-induced disorder dampened the propagation of transverse phonons, which was the origin of the increased anharmonicity and largely depressed lattice thermal conductivity.

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• 1 By tuning electron and phonon localization, we enhanced the figure-of-merit value to 2.7 at 750 kelvin in germanium telluride-based high-entropy materials and realized a high experimental conversion efficiency of 13.3% at a temperature difference of 506 kelvin with the fabricated segmented module.
• 2 By increasing the entropy, the increased crystal symmetry delocalized the distribution of electrons in the distorted rhombohedral structure, resulting in band convergence and improved electrical properties.
• 3 By contrast, the localized phonons from the entropy-induced disorder dampened the propagation of transverse phonons, which was the origin of the increased anharmonicity and largely depressed lattice thermal conductivity.

This work deepens our understanding of the fundamental laws governing the universe, from subatomic particles to cosmic structures.

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